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onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1

GBP 13.00

1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1

GBP 16.54

1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1, Maximum Drain Source Resistance: 0.056 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 12.42

1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1, Maximum Drain Source Resistance: 0.056 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 15.84

1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1, Maximum Drain Source Resistance: 0.056 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 14.10

1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1, Maximum Drain Source Resistance: 0.056 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 17.98

1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.53

1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.30

1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.25

1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 2.63 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.38mm, Length: 6.73mm, MPN: NTD4809NT4G

GBP 0.52

1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 2.63 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.38mm, Length: 6.73mm, MPN: NTD4809NT4G

GBP 0.34

1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 2.63 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.38mm, Length: 6.73mm, MPN: NTD4809NT4G

GBP 0.69

1

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC, Maximum Supply Current: 58 mA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Width: 4mm, Maximum Operating Supply Voltage: -5.5 V, Maximum Operating Temperature: +70 °C, Minimum Operating Supply Voltage: -4.2 V, Minimum Operating Temperature: -40 °C

GBP 8.86

1

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC, Maximum Supply Current: 58 mA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Width: 4mm, Maximum Operating Supply Voltage: -5.5 V, Maximum Operating Temperature: +70 °C, Minimum Operating Supply Voltage: -4.2 V, Minimum Operating Temperature: -40 °C

GBP 9.61

1

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC, Maximum Supply Current: 58 mA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Width: 4mm, Maximum Operating Supply Voltage: -5.5 V, Maximum Operating Temperature: +70 °C, Minimum Operating Supply Voltage: -4.2 V, Minimum Operating Temperature: -40 °C

GBP 8.48

1

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.51

1

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.61

1

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.20

1

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onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NVH4L040N120SC1

onsemi SiC N-Channel MOSFET Transistor, 58 A, 1200 V, 4-Pin TO-247 NTH4L040N120SC1

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK FDD8880

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG

onsemi N-Channel MOSFET, 58 A, 30 V, 3-Pin DPAK NTD4809NG

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC

onsemi MCH12140DG, Phase Frequency Detector 800MHz 8-Pin SOIC

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A

onsemi N-Channel MOSFET, 21 A, 30 V, 3-Pin DPAK FDD6630A