rb2191 901/58 from GBP 0 | See the cheapest prices and offers on Cobiro CSS.com

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 4.83mm, Length: 10.41mm

GBP 3.52

1

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 4.83mm, Length: 10.41mm

GBP 2.39

1

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.75 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 4.83mm, Length: 10.41mm

GBP 2.29

1

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 31.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 6.25mm

GBP 0.50

1

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 31.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 6.25mm

GBP 0.32

1

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 31.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V, Height: 1.12mm, Length: 6.25mm

GBP 0.24

1

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series, Capacitance: 1.5µF, Lead Pitch: 43mm, Length: 58mm, Depth: 35mm, Height: 50mm, Dimensions: 58 x 35 x 50mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 2.5mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, MPN: MKP386M515200YT4

GBP 10.53

1

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series, Capacitance: 1.5µF, Lead Pitch: 43mm, Length: 58mm, Depth: 35mm, Height: 50mm, Dimensions: 58 x 35 x 50mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 2.5mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, MPN: MKP386M515200YT4

GBP 11.33

1

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series, Capacitance: 1.5µF, Lead Pitch: 43mm, Length: 58mm, Depth: 35mm, Height: 50mm, Dimensions: 58 x 35 x 50mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 2.5mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, MPN: MKP386M515200YT4

GBP 11.93

1

Vishay 5μF Polypropylene Capacitor PP 1.25kV dc ±5% Tolerance MKP386M Series

Vishay 5μF Polypropylene Capacitor PP 1.25kV dc ±5% Tolerance MKP386M Series, Capacitance: 5µF, Lead Pitch: 43mm, Length: 58mm, Depth: 35mm, Height: 50mm, Dimensions: 58 x 35 x 50mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 2.5mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, Terminal Type: Screw Mount, MPN: MKP386M550125YT4

GBP 13.07

1

Vishay 1μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance MKP386M Series

Vishay 1μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance MKP386M Series, Capacitance: 1µF, Lead Pitch: 43mm, Length: 58mm, Depth: 30mm, Height: 45mm, Dimensions: 58 x 30 x 45mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 4mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, Terminal Type: Screw Mount, MPN: MKP386M510200YT4

GBP 9.34

1

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.55mm

GBP 0.55

1

Vishay 5μF Polypropylene Capacitor PP 1.25kV dc ±5% Tolerance MKP386M Series

Vishay 5μF Polypropylene Capacitor PP 1.25kV dc ±5% Tolerance MKP386M Series, Capacitance: 5µF, Lead Pitch: 43mm, Length: 58mm, Depth: 35mm, Height: 50mm, Dimensions: 58 x 35 x 50mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 2.5mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, Terminal Type: Screw Mount, MPN: MKP386M550125YT4

GBP 10.99

1

Vishay 1μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance MKP386M Series

Vishay 1μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance MKP386M Series, Capacitance: 1µF, Lead Pitch: 43mm, Length: 58mm, Depth: 30mm, Height: 45mm, Dimensions: 58 x 30 x 45mm, Dielectric: Polypropylene Film, Equivalent Series Resistance: 4mΩ, Maximum Operating Temperature: +85°C, Minimum Operating Temperature: -50°C, Terminal Type: Screw Mount, MPN: MKP386M510200YT4

GBP 13.03

1

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.55mm

GBP 0.35

1

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.98

1

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.98

1

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.55mm

GBP 0.21

1

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 58 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.55mm

GBP 0.46

1

Brand

Gender

Merchant

Price (EUR)

Vishay N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.

Vishay N/P-Ch MOSFET SO-8 60V 58/120mohm @ 10V-

Vishay N/P-Ch MOSFET SO-8 60V 58/120mohm @ 10V-

Vishay N/P-Ch MOSFET SO-8 60V 58/120mohm @ 10V-

Vishay N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.

Vishay N/P-Ch MOSFET TSOP-6 20V 58/195mohm @ 4.

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3

Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3

Vishay N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO SIRA14DP-T1-GE3

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series

Vishay 1.5μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance Screw Mount MKP386M Series

Vishay 5μF Polypropylene Capacitor PP 1.25kV dc ±5% Tolerance MKP386M Series

Vishay 1μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance MKP386M Series

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

Vishay 5μF Polypropylene Capacitor PP 1.25kV dc ±5% Tolerance MKP386M Series

Vishay 1μF Polypropylene Capacitor PP 2kV dc ±5% Tolerance MKP386M Series

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3

Vishay Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC SI9933CDY-T1-GE3

Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3