ROHM N-Channel MOSFET, 4 A, 650 V, 3-Pin D2PAK R6504ENJTL
ROHM N-Channel MOSFET, 4 A, 650 V, 3-Pin D2PAK R6504ENJTL, Package Type: TO-263S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V