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OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics UV Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 720nm, Height: 5.21mm, Diameter: 13.97mm, Peak Photo Sensitivity: 0.14A/W, Polarity: Reverse, MPN: UV-035EQ

GBP 47.70

1

OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics UV Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 720nm, Height: 5.21mm, Diameter: 13.97mm, Peak Photo Sensitivity: 0.14A/W, Polarity: Reverse, MPN: UV-035EQ

GBP 44.58

1

OSI Optoelectronics, OSD1-E IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics IR Si Photodiode, Through Hole TO-18, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 550nm, Number of Pins: 2, Height: 0.2in, Diameter: 5.33mm, Polarity: Reverse, Series: OSD, MPN: OSD1-E

GBP 20.09

1

OSI Optoelectronics, OSD1-E IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics IR Si Photodiode, Through Hole TO-18, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 550nm, Number of Pins: 2, Height: 0.2in, Diameter: 5.33mm, Polarity: Reverse, Series: OSD, MPN: OSD1-E

GBP 18.81

1

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics UV Si Photodiode, Through Hole Ceramic, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 980nm, Number of Pins: 2, Length: 0.4in, Height: 0.08in, Peak Photo Sensitivity: 0.5A/W, Polarity: Reverse, Typical Rise Time: 1µs, MPN: UV-035DQC

GBP 73.45

1

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics UV Si Photodiode, Through Hole Ceramic, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 980nm, Number of Pins: 2, Length: 0.4in, Height: 0.08in, Peak Photo Sensitivity: 0.5A/W, Polarity: Reverse, Typical Rise Time: 1µs, MPN: UV-035DQC

GBP 78.43

1

OSI Optoelectronics, APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.25mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD10-8-150-T52

GBP 87.45

1

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.8mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD05-8-150-T52L

GBP 75.21

1

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics IR Si Photodiode, Through Hole TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 4.14mm, Diameter: 9.2mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD15-8-150-TO5

GBP 75.14

1

OSI Optoelectronics, APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.25mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD10-8-150-T52

GBP 94.15

1

OSI Optoelectronics, PIN-3CDI IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics IR Si Photodiode, Through Hole TO-18, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.2in, Diameter: 5.33mm, Series: Photoconductive, Typical Rise Time: 10ns, MPN: PIN-3CDI

GBP 13.90

1

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics IR Si Photodiode, Through Hole TO-52, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 3.8mm, Diameter: 5.4mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD05-8-150-T52L

GBP 70.33

1

OSI Optoelectronics, PIN-5DPI IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics IR Si Photodiode, Through Hole TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.18in, Diameter: 9.14mm, Series: Photoconductive, Typical Rise Time: 12ns, MPN: PIN-5DPI

GBP 18.90

1

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics IR Si Photodiode, Through Hole TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 800nm, Number of Pins: 3, Minimum Wavelength Detected: 600nm, Height: 4.14mm, Diameter: 9.2mm, Peak Photo Sensitivity: 50A/W, Polarity: Reverse, MPN: APD15-8-150-TO5

GBP 80.23

1

OSI Optoelectronics, PIN-020A IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics IR Si Photodiode, Through Hole TO-18, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.2in, Diameter: 5.33mm, Series: Photoconductive, Typical Rise Time: 6ns, MPN: PIN-020A

GBP 17.77

1

OSI Optoelectronics, PIN-10D IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics IR Si Photodiode, Surface Mount BNC, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 1, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Length: 24.77mm, Height: 26.16mm, Peak Photo Sensitivity: 0.65A/W, Polarity: Reverse, Series: Photoconductive, MPN: PIN-10D

GBP 95.03

1

OSI Optoelectronics, PIN-10D IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics IR Si Photodiode, Surface Mount BNC, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 1, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Length: 24.77mm, Height: 26.16mm, Peak Photo Sensitivity: 0.65A/W, Polarity: Reverse, Series: Photoconductive, MPN: PIN-10D

GBP 101.49

1

OSI Optoelectronics, FCI-InGaAs-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics IR InGaAs Photodiode, Through Hole TO-46, TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 1550nm, Number of Pins: 2, Minimum Wavelength Detected: 900nm, Maximum Wavelength Detected: 1700nm, Height: 3.81mm, Diameter: 5.4mm, Peak Photo Sensitivity: 0.95A/W, Polarity: Reverse, MPN: FCI-InGaAs-1000

GBP 68.01

1

OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics UV Si Photodiode, Through Hole Ceramic, Spectrum(s) Detected: Ultraviolet, Wavelength of Peak Sensitivity: 980nm, Number of Pins: 2, Minimum Wavelength Detected: 190nm, Maximum Wavelength Detected: 1100nm, Length: 16.51mm, Width: 14.99mm, Height: 2.03mm, Peak Photo Sensitivity: 0.5A/W, Polarity: Reverse, MPN: PIN-UV-100DQC

GBP 146.99

1

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics IR Si Photodiode, Through Hole TO-8, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 436nm, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 0.17in, Diameter: 13.97mm, Peak Photo Sensitivity: 0.21A/W, Polarity: Reverse, Series: OSD, Typical Rise Time: 30µs, MPN: OSD60-5T

GBP 89.62

1

OSI Optoelectronics, PIN-040A IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics IR Si Photodiode, Through Hole TO-18, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 5.08mm, Diameter: 5.33mm, Peak Photo Sensitivity: 0.65A/W, Polarity: Reverse, Series: Photoconductive, MPN: PIN-040A

GBP 18.83

1

OSI Optoelectronics, FCI-INGAAS-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics IR InGaAs Photodiode, Through Hole TO-46, TO-5, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 1550nm, Number of Pins: 2, Minimum Wavelength Detected: 900nm, Maximum Wavelength Detected: 1700nm, Height: 3.81mm, Diameter: 5.4mm, Peak Photo Sensitivity: 0.95A/W, Polarity: Reverse, MPN: FCI-INGAAS-1000

GBP 63.59

1

OSI Optoelectronics, PIN-10DP IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics IR Si Photodiode, Surface Mount BNC, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 1, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 1.03in, Diameter: 24.64mm, Peak Photo Sensitivity: 0.6A/W, Polarity: Reverse, Typical Rise Time: 1000ns, MPN: PIN-10DP

GBP 83.61

1

OSI Optoelectronics, PIN-040A IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics IR Si Photodiode, Through Hole TO-18, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 3, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 5.08mm, Diameter: 5.33mm, Peak Photo Sensitivity: 0.65A/W, Polarity: Reverse, Series: Photoconductive, MPN: PIN-040A

GBP 17.54

1

OSI Optoelectronics, PIN-10DP IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics IR Si Photodiode, Surface Mount BNC, Spectrum(s) Detected: Infrared, Wavelength of Peak Sensitivity: 970nm, Number of Pins: 1, Minimum Wavelength Detected: 350nm, Maximum Wavelength Detected: 1100nm, Height: 1.03in, Diameter: 24.64mm, Peak Photo Sensitivity: 0.6A/W, Polarity: Reverse, Typical Rise Time: 1000ns, MPN: PIN-10DP

GBP 89.28

1

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OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics, UV-035EQ UV Si Photodiode, Through Hole TO-8

OSI Optoelectronics, OSD1-E IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics, OSD1-E IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics, UV-035DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics, APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics, APD10-8-150-T52 IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, PIN-3CDI IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics, APD05-8-150-T52L IR Si Photodiode, Through Hole TO-52

OSI Optoelectronics, PIN-5DPI IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics, APD15-8-150-TO5 IR Si Photodiode, Through Hole TO-5

OSI Optoelectronics, PIN-020A IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics, PIN-10D IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics, PIN-10D IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics, FCI-InGaAs-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic

OSI Optoelectronics, OSD60-5T IR Si Photodiode, Through Hole TO-8

OSI Optoelectronics, PIN-040A IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics, FCI-INGAAS-1000 IR InGaAs Photodiode, Through Hole TO-46, TO-5

OSI Optoelectronics, PIN-10DP IR Si Photodiode, Surface Mount BNC

OSI Optoelectronics, PIN-040A IR Si Photodiode, Through Hole TO-18

OSI Optoelectronics, PIN-10DP IR Si Photodiode, Surface Mount BNC