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Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LSATMA1

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.38

1

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LS

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm

GBP 0.71

1

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LS

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 28 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, MPN: BSC050NE2LSATMA1

GBP 0.71

1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 5.96

1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 6.09

1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm

GBP 5.96

1

Infineon N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1

Infineon N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.18

1

Infineon N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1

Infineon N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V

GBP 1.25

1

Infineon IRGR4607DPBF IGBT, 11 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

Infineon IRGR4607DPBF IGBT, 11 A 600 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 58 W, Switching Speed: 8 → 30kHz, Transistor Configuration: Single, Length: 6.73mm, Width: 6.22mm, Height: 2.39mm, Dimensions: 6.73 x 6.22 x 2.39mm, Gate Capacitance: 250pF

GBP 1.21

1

Infineon BTS723GWXUMA1High Side, High Side Power Switch Power Switch IC 14-Pin, DSO-14-37

Infineon BTS723GWXUMA1High Side, High Side Power Switch Power Switch IC 14-Pin, DSO-14-37, Switch On Resistance: 210mΩ, Maximum Operating Supply Voltage: 58 V, Maximum Operating Current: 4.2A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 8.75 x 4 x 1.47mm

GBP 2.74

1

Infineon BTS723GWXUMA1High Side, High Side Power Switch Power Switch IC 14-Pin, DSO-14-37

Infineon BTS723GWXUMA1High Side, High Side Power Switch Power Switch IC 14-Pin, DSO-14-37, Switch On Resistance: 210mΩ, Maximum Operating Supply Voltage: 58 V, Maximum Operating Current: 4.2A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 8.75 x 4 x 1.47mm

GBP 4.17

1

Infineon IRGR4607DPBF IGBT, 11 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

Infineon IRGR4607DPBF IGBT, 11 A 600 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 58 W, Switching Speed: 8 → 30kHz, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Gate Capacitance: 250pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.23

1

Infineon BTS500851TMAATMA1High Side, High Side Switch Power Switch IC 7-Pin, TO-220

Infineon BTS500851TMAATMA1High Side, High Side Switch Power Switch IC 7-Pin, TO-220, Switch On Resistance: 22mΩ, Maximum Operating Supply Voltage: 58 V, Maximum Operating Current: 44A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 10 x 9.25 x 4.4mm, MPN: BTS50085-1TMA

GBP 3.52

1

Infineon BTS500851TMAATMA1High Side, High Side Switch Power Switch IC 7-Pin, TO-220

Infineon BTS500851TMAATMA1High Side, High Side Switch Power Switch IC 7-Pin, TO-220, Switch On Resistance: 22mΩ, Maximum Operating Supply Voltage: 58 V, Maximum Operating Current: 44A, Mounting Type: Surface Mount, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Dimensions: 10 x 9.25 x 4.4mm, MPN: BTS50085-1TMA

GBP 5.36

1

Infineon T880N16TOFXPSA1, Thyristor 1600V, 880A 250mA

Infineon T880N16TOFXPSA1, Thyristor 1600V, 880A 250mA, Thyristor Type: PCT, Package Type: BG-T5726K-1, Surge Current Rating: 17500A, Mounting Type: Stud, Maximum Gate Trigger Voltage: 2.2V, Maximum Holding Current: 300mA, Dimensions: 58 (Dia.) x 26.5mm, Diameter: 58mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C, Peak On-State Voltage: 1.95V

GBP 118.24

1

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.8mm

GBP 1.62

1

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.8mm

GBP 1.61

1

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.8mm

GBP 0.24

1

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Height: 9.8mm

GBP 1.90

1

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.8mm

GBP 0.24

1

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.8mm

GBP 0.50

1

Infineon P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

Infineon P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 12.6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 58 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.3mm

GBP 0.75

1

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, 58 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 1.10

1

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, 58 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 1.29

1

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 29 mΩ, 58 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm

GBP 0.76

1

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Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LSATMA1

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LS

Infineon N-Channel MOSFET, 58 A, 25 V, 8-Pin TDSON BSC050NE2LS

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1

Infineon N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1

Infineon N-Channel MOSFET, 58 A, 100 V, 3-Pin TO-220 IPP126N10N3GXKSA1

Infineon IRGR4607DPBF IGBT, 11 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

Infineon BTS723GWXUMA1High Side, High Side Power Switch Power Switch IC 14-Pin, DSO-14-37

Infineon BTS723GWXUMA1High Side, High Side Power Switch Power Switch IC 14-Pin, DSO-14-37

Infineon IRGR4607DPBF IGBT, 11 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

Infineon BTS500851TMAATMA1High Side, High Side Switch Power Switch IC 7-Pin, TO-220

Infineon BTS500851TMAATMA1High Side, High Side Switch Power Switch IC 7-Pin, TO-220

Infineon T880N16TOFXPSA1, Thyristor 1600V, 880A 250mA

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF

Infineon N-Channel MOSFET, 52 A, 55 V, 3-Pin TO-220FP IRLI3705NPBF

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF

Infineon N-Channel MOSFET, 49 A, 55 V, 3-Pin TO-220FP IRFI1010NPBF

Infineon P-Channel MOSFET, 50 A, 40 V, 3-Pin DPAK IPD50P04P413ATMA1

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF

Infineon Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V, 8-Pin SOIC IRF7389PBF