Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1
Infineon N-Channel MOSFET, 58 A, 650 V, 3-Pin TO-220 IPP60R074C6XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 74 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 480.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 0.9V, Height: 4.57mm, Length: 10.36mm