Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F)

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 320 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20mm, Length: 15.5mm