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ON Semiconductor N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK NTD600N80S3Z

ON Semiconductor N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK NTD600N80S3Z, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.6 Ω, Maximum Gate Threshold Voltage: 3.8V, Number of Elements per Chip: 1, Series: SUPERFET III

GBP 0.91

1

ON Semiconductor N-Channel MOSFET, 2 A, 500 V, 3-Pin SOT-223 FDT4N50NZU

ON Semiconductor N-Channel MOSFET, 2 A, 500 V, 3-Pin SOT-223 FDT4N50NZU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Maximum Gate Threshold Voltage: 5.5V, Number of Elements per Chip: 1, Series: UniFET II

GBP 0.64

1

ON Semiconductor N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTPF095N65S3H

ON Semiconductor N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTPF095N65S3H, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.095 Ω, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1, Series: SUPERFET III

GBP 1.63

1

ON Semiconductor N-Channel MOSFET, 2 A, 500 V, 3-Pin SOT-223 FDT4N50NZU

ON Semiconductor N-Channel MOSFET, 2 A, 500 V, 3-Pin SOT-223 FDT4N50NZU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Maximum Gate Threshold Voltage: 5.5V, Number of Elements per Chip: 1, Series: UniFET II

GBP 0.27

1

ON Semiconductor onsemi, 8.2V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor onsemi, 8.2V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 20mA, Maximum Zener Impedance: 8Ω, Maximum Reverse Leakage Current: 3µA, Dimensions: 1.91 (Dia.) x 4.56mm, Maximum Operating Temperature: +200 °C, Minimum Operating Temperature: -65 °C, MPN: 1N5237BTR

GBP 0.02

1

ON Semiconductor, 6.2V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor, 6.2V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 20mA, Maximum Zener Impedance: 7Ω, Maximum Reverse Leakage Current: 5µA, Dimensions: 1.91 (Dia.) x 4.56mm, Maximum Operating Temperature: +200 °C, Minimum Operating Temperature: -65 °C, MPN: 1N5234BTR

GBP 0.02

1

ON Semiconductor onsemi, 33V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor onsemi, 33V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 3.8mA, Maximum Zener Impedance: 58Ω, Maximum Reverse Leakage Current: 100nA, Dimensions: 1.91 (Dia.) x 4.56mm, Maximum Operating Temperature: +200 °C, Minimum Operating Temperature: -65 °C, MPN: 1N5257BTR

GBP 0.02

1

ON Semiconductor onsemi, 3.3V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor onsemi, 3.3V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 20mA, Maximum Zener Impedance: 28Ω, Maximum Reverse Leakage Current: 25µA, Dimensions: 1.91 (Dia.) x 4.56mm, Maximum Operating Temperature: +200 °C, Minimum Operating Temperature: -65 °C, MPN: 1N5226BTR

GBP 0.02

1

ON Semiconductor, 7.5V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor, 7.5V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35, Diode Configuration: Single, Number of Elements per Chip: 1, Zener Type: General Purpose, Test Current: 20mA, Maximum Zener Impedance: 6Ω, Maximum Reverse Leakage Current: 3µA, Dimensions: 1.91 (Dia.) x 4.56mm, Maximum Operating Temperature: +200 °C, Minimum Operating Temperature: -65 °C, MPN: 1N5236BTR

GBP 0.02

1

ON Semiconductor ON Semi 2N4403TA PNP Transistor, 600 mA, 40 V, 3-Pin TO-92

ON Semiconductor ON Semi 2N4403TA PNP Transistor, 600 mA, 40 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 1, Dimensions: 5.2 x 4.19 x 5.33mm, Maximum Base Emitter Saturation Voltage: 1.3 V, Maximum Collector Emitter Saturation Voltage: 0.75 V, Maximum Operating Temperature: +150 °C

GBP 0.04

1

ON Semiconductor ON Semi 2N3904TAR NPN Transistor, 200 mA, 40 V, 3-Pin TO-92

ON Semiconductor ON Semi 2N3904TAR NPN Transistor, 200 mA, 40 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 300 MHz, Number of Elements per Chip: 1, Dimensions: 5.2 x 4.19 x 5.33mm, Maximum Base Emitter Saturation Voltage: 0.95 V, Maximum Collector Emitter Saturation Voltage: 0.3 V

GBP 0.03

1

Brand

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Merchant

Price (EUR)

ON Semiconductor N-Channel MOSFET, 8 A, 800 V, 3-Pin DPAK NTD600N80S3Z

ON Semiconductor N-Channel MOSFET, 2 A, 500 V, 3-Pin SOT-223 FDT4N50NZU

ON Semiconductor N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 NTPF095N65S3H

ON Semiconductor N-Channel MOSFET, 2 A, 500 V, 3-Pin SOT-223 FDT4N50NZU

ON Semiconductor onsemi, 8.2V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor, 6.2V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor onsemi, 33V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor onsemi, 3.3V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor, 7.5V Zener Diode 5% 500 mW Through Hole 2-Pin DO-35

ON Semiconductor ON Semi 2N4403TA PNP Transistor, 600 mA, 40 V, 3-Pin TO-92

ON Semiconductor ON Semi 2N3904TAR NPN Transistor, 200 mA, 40 V, 3-Pin TO-92