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Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.00

1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.4V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 97.61

1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 92.76

1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 0.016 Ω, Maximum Gate Threshold Voltage: 20V, Number of Elements per Chip: 4, Series: CoolSiC

GBP 141.79

1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1, Mounting Type: Panel Mount, Diode Configuration: Series, Maximum Forward Voltage Drop: 1.4V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.9kA

GBP 89.28

1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 103.22

1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1, Mounting Type: Panel Mount, Diode Configuration: Common Cathode, Maximum Forward Voltage Drop: 1.5V, Number of Elements per Chip: 2, Peak Non-Repetitive Forward Surge Current: 2.8kA

GBP 103.19

1

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Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KHPSA1

Infineon Quad N-Channel MOSFET Module, 100 A, 1200 V Module FF11MR12W1M1B11BOMA1

Infineon 1600V 104A, Dual Silicon Junction Diode, 3-Pin DD104N16KHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1

Infineon 1600V 89A, Dual Silicon Junction Diode, 3-Pin DD89N16KKHPSA1