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Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 1.43

1

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 2.33

1

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 2.61

1

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2, Mounting Type: Through Hole, Number of Elements per Chip: 1

GBP 1.50

1

Infineon 600V 4A, Diode, 3-Pin PG-TO252 IDD04SG60CXTMA2

Infineon 600V 4A, Diode, 3-Pin PG-TO252 IDD04SG60CXTMA2, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1

GBP 1.41

1

Infineon 600V 6A, Diode, 3-Pin PG-TO252 IDD06SG60CXTMA2

Infineon 600V 6A, Diode, 3-Pin PG-TO252 IDD06SG60CXTMA2, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1

GBP 3.20

1

Infineon 600V 6A, Diode, 3-Pin PG-TO252 IDD06SG60CXTMA2

Infineon 600V 6A, Diode, 3-Pin PG-TO252 IDD06SG60CXTMA2, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1

GBP 1.84

1

Infineon 600V 4A, Diode, 3-Pin PG-TO252 IDD04SG60CXTMA2

Infineon 600V 4A, Diode, 3-Pin PG-TO252 IDD04SG60CXTMA2, Mounting Type: Through Hole, Diode Configuration: Single, Number of Elements per Chip: 1

GBP 2.38

1

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

GBP 1.69

1

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 55 mO, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.70

1

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 55 mO, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.07

1

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2

GBP 0.86

1

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 7.2 mO, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1

GBP 0.51

1

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF, Mounting Type: SMD, Maximum Drain Source Resistance: 7.2 mO, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1

GBP 0.19

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: SMD, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

GBP 0.36

1

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF, Package Type: DPAK (TO-252), Mounting Type: SMD, Maximum Drain Source Resistance: 8.2 mO, Maximum Gate Threshold Voltage: 2.25V, Number of Elements per Chip: 1

GBP 0.67

1

Infineon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 BSS7728NH6327XTSA2

Infineon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 BSS7728NH6327XTSA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 Ω, Maximum Gate Threshold Voltage: 2.3V, Number of Elements per Chip: 1, Series: SIPMOS

GBP 0.13

1

Infineon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 BSS7728NH6327XTSA2

Infineon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 BSS7728NH6327XTSA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 Ω, Maximum Gate Threshold Voltage: 2.3V, Number of Elements per Chip: 1, Series: SIPMOS

GBP 0.05

1

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0064 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Number of Elements per Chip: 1

GBP 0.44

1

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.0V, Number of Elements per Chip: 1

GBP 0.81

1

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5 Ω, Maximum Gate Threshold Voltage: 3V, Number of Elements per Chip: 2, Series: HEXFET, MPN: AUIRF7341QTR

GBP 0.71

1

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5 Ω, Maximum Gate Threshold Voltage: 3V, Number of Elements per Chip: 2, Series: HEXFET, MPN: AUIRF7341QTR

GBP 0.82

1

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0064 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.2V, Number of Elements per Chip: 1

GBP 0.60

1

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0045 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.0V, Number of Elements per Chip: 1

GBP 0.60

1

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Number of Elements per Chip: 1, Series: HEXFET

GBP 1.18

1

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Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 6A, Switching Diode, 2-Pin PG-TO220-2 IDH06G65C5XKSA2

Infineon 650V 3A, Switching Diode, 2-Pin PG-TO220-2 IDH03G65C5XKSA2

Infineon 600V 4A, Diode, 3-Pin PG-TO252 IDD04SG60CXTMA2

Infineon 600V 6A, Diode, 3-Pin PG-TO252 IDD06SG60CXTMA2

Infineon 600V 6A, Diode, 3-Pin PG-TO252 IDD06SG60CXTMA2

Infineon 600V 4A, Diode, 3-Pin PG-TO252 IDD04SG60CXTMA2

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon N-Channel MOSFET, 34 A, 200 V SuperSO8 5x6 IRFH5020TRPBF

Infineon Dual MOSFET, 5.1 A, 55 V SO-8 IRF7341GTRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 82 A, 30 V PQFN 5mm x 6mm IRFH8325TRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 86 A, 30 V DPAK IRFR3709ZTRPBF

Infineon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 BSS7728NH6327XTSA2

Infineon N-Channel MOSFET, 200 mA, 60 V, 3-Pin SOT-23 BSS7728NH6327XTSA2

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO

Infineon Silicon P-Channel MOSFET, 85 A, 40 V, 3-Pin DPAK IPD85P04P4L06ATMA2

Infineon Silicon P-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90P03P404ATMA2

Infineon Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC IRF6726MTRPBF