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IXYS N-Channel MOSFET, 50 A, 600 V, 9-Pin SMPD MKE38RK600DFELB

IXYS N-Channel MOSFET, 50 A, 600 V, 9-Pin SMPD MKE38RK600DFELB, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1V, Height: 5.5mm, Length: 25mm

GBP 17.23

1

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 9.31

1

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 10.13

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IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 6.5V, Maximum Power Dissipation: 690 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 16.26mm

GBP 8.92

1

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 12.21

1

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 700 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.2mm

GBP 15.36

1

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 12.36

1

IXYS N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227B IXFN80N60P3

IXYS N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227B IXFN80N60P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.23mm

GBP 15.88

1

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 21.34mm, Length: 16.13mm

GBP 12.21

1

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 26.16mm, Length: 19.96mm

GBP 13.06

1

IXYS N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227B IXFN80N60P3

IXYS N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227B IXFN80N60P3, Mounting Type: Panel Mount, Maximum Drain Source Resistance: 70 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 960 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 9.6mm, Length: 38.23mm

GBP 16.11

1

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 26.16mm, Length: 19.96mm

GBP 11.69

1

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q, Mounting Type: Through Hole, Maximum Drain Source Resistance: 320 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 26.16mm, Length: 19.96mm

GBP 14.32

1

IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXTH80N65X2

IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXTH80N65X2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 890 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 9.33

1

IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXFH80N65X2-4

IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXFH80N65X2-4, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 890 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

GBP 9.14

1

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Price (EUR)

IXYS N-Channel MOSFET, 50 A, 600 V, 9-Pin SMPD MKE38RK600DFELB

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247 IXFH30N50Q3

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

IXYS N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227B IXFN80N50P

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

IXYS N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227B IXFN80N60P3

IXYS N-Channel MOSFET, 25 A, 800 V, 3-Pin ISOPLUS247 IXFR44N80P

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

IXYS N-Channel MOSFET, 66 A, 600 V, 4-Pin SOT-227B IXFN80N60P3

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

IXYS N-Channel MOSFET, 27 A, 800 V, 3-Pin TO-264AA IXFK27N80Q

IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXTH80N65X2

IXYS N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXFH80N65X2-4