Handbook for III-V High Electron Mobility Transistor Technologies

Description

This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics material used fabrications details modeling simulation and other important aspects. It initiates by describing principle of operation material systems and material technologies followed by description of the structure I-V characteristics modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key FeaturesCombines III-As/P/N HEMTs with reliability and current status in single volumeIncludes AC/DC modelling and (sub)millimeter wave devices with reliability analysisCovers all theoretical and experimental aspects of HEMTsDiscusses AlGaN/GaN transistorsPresents DC RF and breakdown characteristics of HEMTs on various material systems using graphs and plots | Handbook for III-V High Electron Mobility Transistor Technologies