Nitride Wide Bandgap Semiconductor Material and Electronic Devices - Jin Feng Zhang - Paperback Bog - Taylor & Francis Ltd - 2020 - Engelsk -
Brand: Taylor & Francis Ltd
Description
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
